| PART |
Description |
Maker |
| TSC251G1DXXX-L12CB TSC251G1DXXX-L12CED TSC251G1DXX |
FPGA, CYCLONE III, 5K LE, 164MQFP Programmable Logic Type:FPGA; Logic IC function:FPGA; Logic IC family:Cyclone III; Logic IC Base Number:3; I/O lines, No. of:106;
IC CYCLONE III FPGA 5K 256-UBGA
IC CYCLONE III FPGA 55K 484 UBGA
IC CYCLONE III FPGA 55K 780 FBGA
IC CYCLONE III FPGA 55K 780FBGA
8-BIT MICROCONTROLLER 8位微控制
|
Cypress Semiconductor Corp.
Electronic Theatre Controls, Inc.
|
| TSC251G2DXXX-24IA TSC251G2DXXX-24IB TSC251G2DXXX-L |
IC CYCLONE III FPGA 80K 484 FBGA
IC CYCLONE III FPGA 80K 780FBGA
IC CYCLONE III FPGA 5K 144 EQFP
IC CYCLONE III FPGA 5K 256 UBGA
IC CYCLONE III FPGA 5K 256-UBGA
IC CYCLONE III FPGA 5K 256 FBGA
IC CYCLONE III FPGA 55K 484 UBGA
8/16-bit Microcontroller with Serial Communication Interfaces 16位产品微控制器的串行通信接口
|
Atmel, Corp.
|
| TSC390 TSC395 TSC391 TSC392 TSC393 TSC394 TSC391AL |
FPGA, CYCLONE III, 80K LE, 780FBGA Programmable Logic Type:FPGA; Logic IC function:FPGA; Logic IC family:Cyclone III; Logic IC Base Number:3; I/O lines, No. of:429;
IC FLEX 6000 FPGA 10K 100-TQFP
IC CYCLONE III FPGA 80K 484 UBGA
Dual Interface Buffers
|
MICROSEMI[Microsemi Corporation]
|
| 408-10089 |
These kits were designed for use with the AMPOMATOR System III Lead?Making Machine and the AMP?O?LECTRIC Servo Terminator III Machine.
|
Tyco Electronics
|
| EP3C25F256I7N EP3C25Q240C8N EP3C10E144C7 EP3C10F25 |
1. Cyclone III Device Datasheet
The following sections provide information about the absolute maximum ratings, recommended operating conditions, DC characteristics, and other specifications for Cyclone IIIdevices
This chapterdescribes the electric characteristics, switching characteristics,and I/O timing for Cyclone III devices. A glossary is also included for your reference
This chapter describes the electric characteristics, switching characteristics, and I/O timing for Cyclone? III devices. A glossary is also included for your reference.
|
Altera Corporation
|
| LXHL-PR09 LXHL-DW09 DS45 LXHL-DL09 LXHL-PB09 LXHL- |
power light source LUXEON? III Emitter
power light source LUXEON垄莽 III Emitter
power light source LUXEON㈢ III Emitter
|
Lumileds Lighting Company
|
| CY7C603XX08 CY7C60333-LFXC CY7C60333-LFXCT CY7C603 |
enCoRe垄芒 III Low Voltage
enCoRe III Low Voltage
|
Cypress Semiconductor
|
| MBRP30035L |
30 AMP MINIATURE POWER RELAY
SWITCHMODESchottky Power Rectifier(POWERTAP III Package)
SWITCHMODE Schottky Power Rectifier(POWERTAP III Package)
|
Motorola, Inc.
|
| STD50NH02L STD50NH02L-1 STD50NH02LT4 |
RSNTR 12.00MHZ 10PF 0.7% CER SMD-3.4X7.4 -40 85C T&R
N-CHANNEL 24V - 0.0085 ohm - 50A DPAK/IPAK STripFET?/a> III POWER MOSFET
N-CHANNEL 24V - 0.0085 ohm - 50A DPAK/IPAK STripFET⑩ III POWER MOSFET
N-CHANNEL 24V - 0.0085 OHM - 50A DPAK/IPAK STRIPFET III POWER MOSFET
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CY7C6421508 CY7C64215-28PVXC CY7C64215-56LFXC |
enCoRe垄芒 III Full Speed USB Controller
enCoRe III Full Speed USB Controller
|
Cypress Semiconductor
|
| PCA-6003V-00A2E PCA-6003VE-00A2E PCA-6003H-00A2E |
Socket 370 Pentium垄莽 III/Celeron垄莽 Processor (Tualatin) Card with VGA/FE LAN/LCD
Socket 370 Pentium? III/Celeron? Processor (Tualatin) Card with VGA/FE LAN/LCD
|
Advantech Co., Ltd.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
